IN0.53GA0.47AS PHOTO-DIODES WITH DARK CURRENT LIMITED BY GENERATION-RECOMBINATION AND TUNNELING

被引：158

作者：

FORREST, SR ^{[1
]}

LEHENY, RF ^{[1
]}

NAHORY, RE ^{[1
]}

POLLACK, MA ^{[1
]}

机构：

[1] BELL TEL LABS INC, HOLMDEL, NJ 07733 USA

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 03期

关键词：

D O I：

10.1063/1.91922

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：322 / 325

页数：4

共 12 条

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[8] INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODES WITH HIGH AVALANCHE GAIN [J].

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APPLIED PHYSICS LETTERS, 1979, 35 (03) :251-253

[9] ELECTRICAL TRANSPORT IN NGE-PGAAS HETEROJUNCTIONS [J].

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[10]

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