DETERMINATION OF TRANSIENT REGIME OF HOT CARRIERS IN SEMICONDUCTORS, USING THE RELAXATION-TIME APPROXIMATIONS

被引：92

作者：

NOUGIER, JP ^{[1
]}

VAISSIERE, JC ^{[1
]}

GASQUET, D ^{[1
]}

ZIMMERMANN, J ^{[1
]}

CONSTANT, E ^{[1
]}

机构：

[1] UNIV LILLE 1,CTR HYPERFREQUENCES & SEMICOND,CNRS,LAB 287,F-59650 VILLENEUVE DASCQ,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 02期

关键词：

D O I：

10.1063/1.328423

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：825 / 832

页数：8

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