CHARACTERIZATION OF CDTE, HGTE, AND HG1-XCDXTE GROWN BY CHEMICAL BEAM EPITAXY

被引：7
|
作者：
WAGNER, BK
RAJAVEL, D
BENZ, RG
SUMMERS, CJ
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 03期
关键词：
D O I：
10.1116/1.585396
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Detailed characterization of chemical beam epitaxially (CBE) grown CdTe and Hg1-xCd(x)Te layers are reported. These characterizations include photoluminescence, infrared transmission, energy dispersive x-ray analysis, and variable temperature (10-300 K) Hall effect and resistivity measurements. The results indicate that high quality HgCdTe layers can be grown by CBE.
引用
收藏
页码：1656 / 1660
页数：5
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