HIGH-FIELD DIFFUSIVITY OF ELECTRONS IN SILICON

被引：31

作者：

PERSKY, G

BARTELINK, DJ

机构：

来源：

关键词：

D O I：

10.1063/1.1659788

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4414 / +

页数：1

共 16 条

[11] THE FIELD-DEPENDENCE OF CARRIER MOBILITY IN SILICON AND GERMANIUM [J].

PRIOR, AC .

[12]

QUARANTA AA, 1965, PHYS LETT, V17, P102

[13] TRANSPORT PROPERTIES OF GAAS [J].

RUCH, JG ;

KINO, GS .

PHYSICAL REVIEW, 1968, 174 (03) :921-+

[14] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J].

RYDER, EJ .

PHYSICAL REVIEW, 1953, 90 (05) :766-769

[15] DIFFUSIVITY OF ELECTRONS AND HOLES IN SILICON [J].

SIGMON, TW ;

GIBBONS, JF .

[16]

Smith R. A., 1959, SEMICONDUCTORS