HIGH-FIELD DIFFUSIVITY OF ELECTRONS IN SILICON

被引：31

作者：

PERSKY, G

BARTELINK, DJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 11期

关键词：

D O I：

10.1063/1.1659788

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4414 / +

页数：1

共 16 条

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[5]

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[7]

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[8]

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[9] DIRECT AND INDIRECT EXCITATION PROCESSES IN PHOTOELECTRIC EMISSION FROM SILICON [J].

GOBELI, GW ;

ALLEN, FG .

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[10] MEASUREMENT OF HIGH-FIELD CARRIER DRIFT VELOCITIES IN SILICON BY A TIME-OF-FLIGHT TECHNIQUE [J].

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