KINETIC APPROACH TO FIELD-EMISSION FROM SEMICONDUCTORS BY COMPUTER-SIMULATION USING PARTICLES

被引：5

作者：

GHERM, VE

MILESHKINA, NV

SEMYKINA, EA

机构：

[1] Inst. of Phys., Leningrad State Univ., Petrodvorets

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1990年 / 2卷 / 05期

关键词：

D O I：

10.1088/0953-8984/2/5/017

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Direct statistical simulation of non-stationary non-equilibrium electronic phenomena in one-dimensional semiconductor structures is carried out to estimate their influence on the field emission from semiconductors in different working modes of needle cathodes. A macroparticles method is used with self-consistent electric field conditions, taking into account the three-dimensional character of the electron scattering. Computation results are given for n-type A IIIBV semiconductors.

引用

页码：1263 / 1270

页数：8

共 8 条

[1] [Anonymous], 1981, COMPUTER SIMULATION
[2] ASKEROV BM, 1970, KINETIC EFFECTS SEMI, P303
[3] BANNOV NA, 1986, MIKROELEKTRONIKA, V15, P490
[4] BANNOV NA, 1984, FIZ TEKH POLUPROVODN, V18, P769
[5] HIGH-FIELD TRANSPORT IN GAAS, INP AND INAS
BRENNAN, K
HESS, K
[J]. SOLID-STATE ELECTRONICS, 1984, 27 (04) : 347 - 357
[6] Elinson MI, 1965, RADIOTEKH ELEKTRON, V10, P1288
[7] THEORY OF FIELD EMISSION FROM SEMICONDUCTORS
STRATTON, R
[J]. PHYSICAL REVIEW, 1962, 125 (01): : 67 - &
[8] ENERGY DISTRIBUTIONS OF FIELD EMITTED ELECTRONS
STRATTON, R
[J]. PHYSICAL REVIEW, 1964, 135 (3A): : A794 - +

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