EXPONENTIAL BIDIRECTIONAL ASSOCIATIVE MEMORIES

被引：35
|
作者：
JENG, YJ
YEH, CC
CHIUEH, TD
机构：
[1] Department of Electrical Engineering, National Taiwan University, Taipei
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 11期
关键词：
Memories;
D O I：
10.1049/el:19900468
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A bidirectional associative memory (BAM) with an exponential nonlinearity is presented. This method has the advantage of exponential strategy. It improves the performance of the BAM. An energy function that decreases as the memory state changes can be defined, ensuring the stability of the system. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码：717 / 718
页数：2
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