DEEP-LEVEL TRAPS AND CONDUCTION-BAND STRUCTURE OF INP

被引：22

作者：

MAJERFELD, A ^{[1
]}

WADA, O ^{[1
]}

CHOUDHURY, ANMM ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 11期

关键词：

D O I：

10.1063/1.90233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：957 / 959

页数：3

共 10 条

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[6] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

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[8] CONDUCTION-BAND STRUCTURES OF GAAS AND INP [J].

PITT, GD .

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[9] DEEP TRAPS IN IDEAL N-INP SCHOTTKY DIODES [J].

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DAY, B .

ELECTRONICS LETTERS, 1978, 14 (13) :409-411

[10] PRESSURE-DEPENDENCE OF DEEP LEVEL ASSOCIATED WITH OXYGEN IN NORMAL-GAAS [J].

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APPLIED PHYSICS LETTERS, 1978, 32 (11) :764-766

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