LOW-TEMPERATURE SELECTIVE EPITAXIAL-GROWTH OF SILICON AT ATMOSPHERIC-PRESSURE

被引：76
作者：
SEDGWICK, TO
BERKENBLIT, M
KUAN, TS
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 26期
关键词：
D O I：
10.1063/1.101036
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2689 / 2691
页数：3
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