OPTICAL-ABSORPTION OF IN1-XGAXAS-GASB1-YASY SUPER-LATTICES

被引:161
作者
SAIHALASZ, GA
CHANG, LL
WELTER, JM
CHANG, CA
ESAKI, L
机构
关键词
D O I
10.1016/0038-1098(78)91010-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:935 / 937
页数:3
相关论文
共 15 条
[1]   MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J].
CHANG, CA ;
LUDEKE, R ;
CHANG, LL ;
ESAKI, L .
APPLIED PHYSICS LETTERS, 1977, 31 (11) :759-761
[2]  
Dingle R, 1975, FESTKORPERPROBLEME, V15, P21
[3]   ELECTRICAL AND OPTICAL PROPERTIES OF CRYSTALS WITH NIPI-SUPERSTRUCTURE [J].
DOHLER, GH .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 52 (02) :533-&
[4]   THEORY OF ENERGY-BAND LINEUP AT AN ABRUPT SEMICONDUCTOR HETEROJUNCTION [J].
FRENSLEY, WR ;
KROEMER, H .
PHYSICAL REVIEW B, 1977, 16 (06) :2642-2652
[5]  
GOBELI GW, 1965, PHYS REV A, V137, P245
[6]   ELEMENTARY THEORY OF HETEROJUNCTIONS [J].
HARRISON, WA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :1016-1021
[7]   RESONANT RAMAN-SCATTERING IN A SEMICONDUCTOR SUPERLATTICE [J].
MANUEL, P ;
SAIHALASZ, GA ;
CHANG, LL ;
CHANG, CA ;
ESAKI, L .
PHYSICAL REVIEW LETTERS, 1976, 37 (25) :1701-1704
[8]  
Neuberger M., 1971, HDB ELECT MAT, VII
[9]  
NUCHO RA, J VAC SCI TECHNOL
[10]   GE-GAAS (110) INTERFACE - SELF-CONSISTENT CALCULATION OF INTERFACE STATES AND ELECTRONIC-STRUCTURE [J].
PICKETT, WE ;
LOUIE, SG ;
COHEN, ML .
PHYSICAL REVIEW LETTERS, 1977, 39 (02) :109-112