INFRARED-SPECTRUM OF OXYGEN IN SILICON

被引：8

作者：

OATES, AS ^{[1
]}

STAVOLA, M ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 08期

关键词：

D O I：

10.1063/1.337814

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3114 / 3116

页数：3

相关论文

共 10 条

[1] ABSORPTION OF OXYGEN IN SILICON IN NEAR AND FAR INFRARED
BOSOMWORTH, DR
HAYES, W
SPRAY, ARL
WATKINS, GD
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1970, 317 (1528) : 133 - +
[2] CONFIGURATION + DIFFUSION OF ISOLATED OXYGEN IN SILICON + GERMANIUM
CORBETT, JW
MCDONALD, RS
WATKINS, GD
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (08) : 873 - &
[3] JOHNSON FA, 1958, P PHYS SOC, V73, P265
[4] THE EFFECT OF METALLIC CONTAMINATION ON ENHANCED OXYGEN DIFFUSION IN SILICON AT LOW-TEMPERATURES
NEWMAN, RC
TIPPING, AK
TUCKER, JH
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (27): : L861 - L866
[5] NEWMAN RC, 1973, INFRARED STUDIES CRY, P88
[6] NORWICK AS, 1963, ADV PHYS, V12, P251
[7] Pajot B., 1986, Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, P39
[8] QUANTITATIVE SPECTROSCOPY OF INTERSTITIAL OXYGEN IN SILICON
PAJOT, B
STEIN, HJ
CALES, B
NAUD, C
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (12) : 3034 - 3037
[9] DIFFUSIVITY OF OXYGEN IN SILICON AT THE DONOR FORMATION TEMPERATURE
STAVOLA, M
PATEL, JR
KIMERLING, LC
FREELAND, PE
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 73 - 75
[10] INFRARED-SPECTRUM OF INTERSTITIAL OXYGEN IN SILICON
STAVOLA, M
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 514 - 516