MODELING OF TEMPERATURE-DEPENDENT TRANSPORT PARAMETERS FOR LOW-TEMPERATURE BIPOLAR-TRANSISTOR SIMULATION

被引：0
|
作者：
CHRZANOWSKAJESKE, M [1 ]
JAEGER, RC [1 ]
机构：
[1] AUBURN UNIV,DEPT ELECT ENGN,AUBURN,AL 36849
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 8B期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C426 / C426
页数：1
相关论文
共 50 条
  • [31] Temperature-dependent transport measurements with Arduino
    Hilberer, A.
    Laurent, G.
    Lorin, A.
    Partier, A.
    Bobroff, J.
    Bouquet, F.
    Even, C.
    Fischbach, J. M.
    Marrache-Kikuchi, C. A.
    Monteverde, M.
    Pilette, B.
    Quay, Q.
    PAPERS IN PHYSICS, 2018, 10
  • [32] Temperature-dependent transport in suspended graphene
    Bolotin, K. I.
    Sikes, K. J.
    Hone, J.
    Stormer, H. L.
    Kim, P.
    PHYSICAL REVIEW LETTERS, 2008, 101 (09)
  • [33] Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor
    Chen, Tzu-Pin
    Fu, Ssu-I
    Tsai, Jung-Hui
    Lour, Wen-Shiung
    Guo, Der-Feng
    Cheng, Shiou-Ying
    Liu, Wen-Chau
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (12) : 1733 - 1737
  • [34] Temperature-dependent mobility characteristics in one-dimension transport in junctionless nanowire transistor
    Dou, Ya-Mei
    Guo, Yang-Yan
    Han, Wei-Hua
    Zhao, Xiao-Song
    Yang, Fu-Hua
    2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, : 311 - 313
  • [35] Temperature-dependent noise parameters and modeling of InP/InAlAs/InGaAs HEMTs
    Murti, MR
    Yoo, S
    Raghavan, A
    Nuttinck, S
    Laskar, J
    Bautista, J
    Lai, R
    2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2000, : 1241 - 1244
  • [36] Temperature-dependent noise parameters and modeling of InP/InAlAs/InGaAs HEMTs
    Murti, M.R.
    Yoo, S.
    Raghavan, A.
    Nuttinck, S.
    Laskar, J.
    Bautista, J.
    Lai, R.
    IEEE MTT-S International Microwave Symposium Digest, 2000, 2 : 1241 - 1244
  • [37] MODELING THE CURRENT-DEPENDENT FT FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR DESIGN
    YUAN, JS
    SOLID-STATE ELECTRONICS, 1991, 34 (10) : 1103 - 1107
  • [38] BIPOLAR-TRANSISTOR DESIGN FOR LOW PROCESS-TEMPERATURE 0.5-MU-M BI-CMOS
    NORISHIMA, M
    NIITSU, Y
    SASAKI, G
    IWAI, H
    MAEGUCHI, K
    1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 1989, : 237 - 240
  • [39] Temperature-Dependent Modeling of Thermoelectric Elements
    Evers, Enzo
    Slenders, Rens
    van Gils, Rob
    Oomen, Tom
    IFAC PAPERSONLINE, 2020, 53 (02): : 8625 - 8630
  • [40] Modification of low-temperature current-gain model for polysilicon emitter bipolar transistor
    Su, Jiuling
    Chang, Xu
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1996, 17 (08): : 617 - 621
12345