LOW-TEMPERATURE ANNEALING OF SHALLOW ARSENIC-IMPLANTED LAYERS

被引：6

作者：

YOUNG, ND ^{[1
]}

CLEGG, JB ^{[1
]}

MAYDELLONDRUSZ, EA ^{[1
]}

机构：

[1] UNIV SURREY,DEPT ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 06期

关键词：

D O I：

10.1063/1.337979

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2189 / 2194

页数：6

共 33 条

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