BEHAVIOR OF IONS IN SIO2

被引:9
作者
WILLIAMS, R [1 ]
机构
[1] RCA LABS,PRINCETON,NJ 08540
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1974年 / 11卷 / 06期
关键词
D O I
10.1116/1.1318675
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1025 / 1027
页数:3
相关论文
共 13 条
[11]   HIGH ELECTRIC-FIELDS IN SILICON DIOXIDE PRODUCED BY CORONA CHARGING [J].
WILLIAMS, R ;
WOODS, MH .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1026-1028
[12]  
WILLIAMS RW, TO BE PUBLISHED
[13]   INJECTION AND REMOVAL OF IONIC CHARGE AT ROOM-TEMPERATURE THROUGH INTERFACE OF AIR WITH SIO2 [J].
WOODS, MH ;
WILLIAMS, R .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) :5506-5510