POLYSILICON OXIDATION SELF-ALIGNED MOS (POSA MOS) - A NEW SELF-ALIGNED DOUBLE SOURCE DRAIN ION-IMPLANTATION TECHNIQUE FOR VLSI

被引：3
|
作者：
HSIA, S
FATEMI, R
TENG, TC
DEORNELLAS, S
SUN, SC
SKINNER, C
机构：
来源：
ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 02期
关键词：
D O I：
10.1109/EDL.1982.25470
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：40 / 42
页数：3
相关论文
共 50 条
  • [41] Advanced patterning solutions for Self-Aligned MOS structures in flash memory
    Yeh, EK
    Howard, BJ
    McGarvey, G
    Hill, E
    Freidjung, I
    Lane, M
    ISSM 2005: IEEE International Symposium on Semiconductor Manufacturing, Conference Proceedings, 2005, : 442 - 445
  • [42] Implementation of fully self-aligned bottom-gate MOS transistor
    Zhang, SD
    Han, RQ
    Zhang, ZK
    Huang, R
    Ko, PK
    Chan, MS
    IEEE ELECTRON DEVICE LETTERS, 2002, 23 (10) : 618 - 620
  • [43] NOVEL SUBMICROMETER MOS DEVICES BY SELF-ALIGNED NITRIDATION OF SILICIDE.
    Kaneko, Hiroko
    Koyanagi, Mitsumasa
    Shimizu, Shinji
    Kubota, Yukiko
    Kishino, Seigo
    IEEE Transactions on Electron Devices, 1986, ED-33 (11) : 1702 - 1709
  • [44] FULLY SELF-ALIGNED AMORPHOUS-SILICON MOS-TRANSISTOR
    OKADA, H
    UCHIDA, Y
    SUGIURA, O
    ZHANG, H
    MATSUMURA, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C341 - C341
  • [45] FULLY SELF-ALIGNED AMORPHOUS-SILICON MOS-TRANSISTORS
    OKADA, H
    UCHIDA, Y
    ZHANG, H
    SUGIURA, O
    MATSUMURA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (09): : L755 - L757
  • [46] Junction capacitance reduction due to self-aligned pocket implantation in elevated source/drain NMOSFETs
    Miura, N
    Abe, Y
    Sugihara, K
    Oishi, T
    Furukawa, T
    Nakahata, T
    Shiozawa, K
    Maruno, S
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (09) : 1969 - 1974
  • [47] QUADRUPLY SELF-ALIGNED MOS (QSA MOS) - A NEW SHORT-CHANNEL HIGH-SPEED HIGH-DENSITY MOSFET FOR VLSI
    OHTA, K
    YAMADA, K
    SAITOH, M
    SHIMIZU, K
    TARUI, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1352 - 1358
  • [48] QUADRUPLY SELF-ALIGNED MOS (QSA MOS) - A NEW SHORT-CHANNEL HIGH-SPEED HIGH-DENSITY MOSFET FOR VLSI
    OHTA, K
    YAMADA, K
    SAITOH, M
    SHIMIZU, K
    TARUI, Y
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) : 417 - 423
  • [49] ACCUMULATION-MODE GAAS MIS-LIKE FET SELF-ALIGNED BY ION-IMPLANTATION
    MATSUMOTO, K
    OGURA, M
    WADA, T
    HASHIZUME, N
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1963 - 1963
  • [50] Polysilicon thin-film transistors using self-aligned cobalt and nickel silicide source and drain contacts
    Sarcona, GT
    Stewart, M
    Hatalis, MK
    IEEE ELECTRON DEVICE LETTERS, 1999, 20 (07) : 332 - 334
12345