POLYSILICON OXIDATION SELF-ALIGNED MOS (POSA MOS) - A NEW SELF-ALIGNED DOUBLE SOURCE DRAIN ION-IMPLANTATION TECHNIQUE FOR VLSI

被引：3
|
作者：
HSIA, S
FATEMI, R
TENG, TC
DEORNELLAS, S
SUN, SC
SKINNER, C
机构：
来源：
ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 02期
关键词：
D O I：
10.1109/EDL.1982.25470
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：40 / 42
页数：3
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