DIFFERENT TYPES OF OPTOELECTRONIC BISTABILITIES IN RESONANT-TUNNELING TRIANGULAR-BARRIER OPTOELECTRONIC SWITCH (R-TOPS)

被引：0

作者：

SAKATA, H

UTAKA, K

MATSUSHIMA, Y

机构：

[1] KDD R&D Laboratories, Kamifukuoka-shi, Saitama 356

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 13期

关键词：

OPTICAL BISTABILITY; PHOTOTRANSISTORS; RESONANT TUNNELING DEVICES;

D O I：

10.1049/el:19950752

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Novel optoelectronic bistabilities in a resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS) are reported. Optically controlled S-shaped and N-shaped NDRs were observed simultaneously in a single device. Different types of optoelectronic bistabilities originated from S-shaped and N-shaped NDRs were obtained by changing the input light power.

引用

页码：1098 / 1099

页数：2