INFRARED SPECTROPHOTOMETRY FOR CARBON IN SILICON AS CALIBRATED BY CHARGED-PARTICLE ACTIVATION

被引：20

作者：

ENDO, Y

AKIYAMA, N

NOZAKI, T

YATSURUG.Y

机构：

来源：

ANALYTICAL CHEMISTRY | 1972年 / 44卷 / 14期

关键词：

D O I：

10.1021/ac60322a008

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：2258 / &

共 14 条

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[8] CHARGED PARTICLE ACTIVATION ANALYSIS FOR CARBON, NITROGEN AND OXYGEN IN SEMICONDUCTOR SILCON [J].

NOZAKI, T ;

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[9] NEW RADIO-TRACER TECHNIQUE FOR EVAPORATION STUDY OF LIGHT ELEMENTS FROM MOLTEN SILICON [J].

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[10]

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