CHARACTERISTICS OF THE METAL-INSULATOR SEMICONDUCTOR STRUCTURE - AIN-SI

被引：25

作者：

MORITA, M

ISOGAI, S

TSUBOUCHI, K

MIKOSHIBA, N

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 01期

关键词：

D O I：

10.1063/1.92129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：50 / 52

页数：3

共 8 条

[1]

Arnold H., 1976, Kristall und Technik, V11, P17, DOI 10.1002/crat.19760110104

[2] OPTICAL-PROPERTIES OF ALUMINUM NITRIDE PREPARED BY CHEMICAL AND PLASMACHEMICAL VAPOR-DEPOSITION [J].

BAUER, J ;

BISTE, L ;

BOLZE, D .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 39 (01) :173-181

[3]

Duffy M. T., 1973, Journal of Electronic Materials, V2, P359, DOI 10.1007/BF02666163

[4] AUTOMATIC C-V PLOTTER [J].

FORWARD, KE ;

HASEGAWA, H ;

HARTNAGEL, HL .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1975, 8 (06) :487-489

[5] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .4. NITRIDES OF ALUMINUM AND GALLIUM [J].

MANASEVIT, HM ;

ERDMANN, FM ;

SIMPSON, WI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) :1864-+

[6]

MORITA M, UNPUBLISHED

[7] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].

NICOLLIA.EH ;

GOETZBER.A .

BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1055-+

[8] EPITAXIALLY GROWN AIN AND ITS OPTICAL BAND GAP [J].

YIM, WM ;

STOFKO, EJ ;

ZANZUCCHI, PJ ;

PANKOVE, JI ;

ETTENBERG, M ;

GILBERT, SL .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :292-296

← 1 →