SEMICONDUCTOR-METAL-SEMICONDUCTOR TRANSITIONS IN THE SUPERSTOICHIOMETRIC DIHYDRIDE YH2.10

被引：42
作者：
VAJDA, P
DAOU, JN
机构：
[1] Hydrogène Dans Les Métaux, Bĝtiment 350, Université Paris-Sud
来源：
PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 24期
关键词：
D O I：
10.1103/PhysRevLett.66.3176
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A metal-semiconductor transition has been observed in the range 230-260 K for the first time in a slightly superstoichiometric rare-earth dihydride, YH2.10 (as compared to the x-rich systems CeH2+x and LaH2+x, with 0.7 less-than-or-similar-to x less-than-or-similar-to 0.9), implying an order-disorder transformation in the octahedral sublattice of the excess hydrogen atoms as the driving mechanism. Furthermore, a resistivity minimum in the range 60-80 K was observed, indicating for the first time in such systems an additional metal-semiconductor transition towards lower temperatures.
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页码：3176 / 3178
页数：3
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