INTERPRETATION OF ANOMALOUS LAYERS AT GAAS N+-N- STEP JUNCTIONS

被引：18

作者：

BLOCKER, TG

COX, RH

HASTY, TE

机构：

来源：

SOLID STATE COMMUNICATIONS | 1970年 / 8卷 / 16期

关键词：

D O I：

10.1016/0038-1098(70)90628-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1313 / &

共 10 条

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[9] DIFFUSION OF HOT AND COLD ELECTRONS IN SEMICONDUCTOR BARRIERS [J].

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[10]

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