EFFECT OF NITRIDATION ON THE DENSITY OF INTERFACE STATES IN W-TI/N-GAAS SCHOTTKY DIODES

被引：5

作者：

CHEN, H ^{[1
]}

SADWICK, LP ^{[1
]}

SOKOLICH, M ^{[1
]}

WANG, KL ^{[1
]}

LARSON, RD ^{[1
]}

CHI, TY ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CO,DIV MICROWAVE PROD,TORRANCE,CA 90509

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 05期

关键词：

D O I：

10.1116/1.584557

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1096 / 1102

页数：7

共 50 条

[21] METALLIZATION SCHEME FOR N-GAAS SCHOTTKY DIODES INCORPORATING SINTERED CONTACTS AND A W DIFFUSION BARRIER [J].

SINHA, AK .

APPLIED PHYSICS LETTERS, 1975, 26 (04) :171-173

[22] SCHOTTKY DIODES ON HYDROGEN PLASMA TREATED N-GAAS SURFACES [J].

PACCAGNELLA, A ;

CALLEGARI, A ;

LATTA, E ;

GASSER, M .

APPLIED PHYSICS LETTERS, 1989, 55 (03) :259-261

[23] RAPID THERMAL ANNEALING OF TI SCHOTTKY CONTACTS TO N-GAAS [J].

PRASAD, K ;

FARAONE, L ;

NASSIBIAN, AG .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1991, 2 (04) :227-229

[24] THE EFFECTS OF SURFACE TREATMENTS ON THE PT/N-GAAS SCHOTTKY INTERFACE [J].

AYDINLI, A ;

MATTAUCH, RJ .

SOLID-STATE ELECTRONICS, 1982, 25 (07) :551-558

[25] The Cu/n-GaAs schottky barrier diodes prepared by anodization process [J].

Mehmet Biber ;

Abdulmecit Türüt .

Journal of Electronic Materials, 2002, 31 :1362-1368

[26] The Cu/n-GaAs Schottky barrier diodes prepared by anodization process [J].

Biber, M ;

Türüt, A .

JOURNAL OF ELECTRONIC MATERIALS, 2002, 31 (12) :1362-1368

[27] The effect of Schottky metal thickness on barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky diodes [J].

Biber, M ;

Güllü, Ö ;

Forment, S ;

Van Meirhaeghe, RL ;

Türüt, A .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (01) :1-5

[28] Thermally annealed Ni/n-GaAs(Si)/In Schottky barrier diodes [J].

Dogan, H. ;

Yildirim, N. ;

Turut, A. .

MICROELECTRONIC ENGINEERING, 2008, 85 (04) :655-658

[29] Temperature dependence of the barrier height of Pt/n-GaAs Schottky diodes [J].

Hübers, HW ;

Röser, HP .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (09) :5326-5330

[30] Photovoltaic and interface state density properties of the Au/n-GaAs Schottky barrier solar cell [J].

Soylu, Murat ;

Yakuphanoglu, Fahrettin .

THIN SOLID FILMS, 2011, 519 (06) :1950-1954

← 1 2 3 4 5 →