CRITICAL ANGLES FOR CHANNELING OF LOW ENERGY IONS IN TUNGSTEN

被引:29
作者
BERGSTRO.I
BJORKQVI.K
DOMEIJ, B
FLADDA, G
ANDERSEN, S
机构
关键词
D O I
10.1139/p68-635
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:2679 / &
相关论文
共 6 条
[1]  
ANDERSEN JU, 1965, NUCL INSTR METH, V38, P207
[2]  
ANDREEN CJ, 1967, PHYS LETTERS, VA 24, P118
[3]   EXPERIMENTAL INVESTIGATION OF ORIENTATION DEPENDENCE OF RUTHERFORD SCATTERING YIELD IN SINGLE CRYSTALS [J].
BOGH, E ;
UGGERHOJ, E .
NUCLEAR INSTRUMENTS & METHODS, 1965, 38 (DEC) :216-&
[4]   DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J].
BOGH, E .
CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :653-&
[5]   CHANNELING OF MEV PROJECTILES IN TUNGSTEN AND SILICON [J].
DAVIES, JA ;
DENHARTOG, J ;
WHITTON, JL .
PHYSICAL REVIEW, 1968, 165 (02) :345-+
[6]  
Lindhard J., 1965, KGL DANSKE VIDENSKAB, V34