SUPERCONDUCTIVITY AND FIELD-EFFECT TRANSISTORS

被引：8

作者：

KLEINSASSER, AW ^{[1
]}

JACKSON, TN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷

关键词：

D O I：

10.7567/JJAPS.26S3.1545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1545 / 1546

页数：2

共 14 条

[1]

ASLAMAZOV LG, 1981, SOV PHYS JETP, V54, P206

[2] EXPERIMENTS OF THE SUPERCONDUCTING PROXIMITY EFFECT BETWEEN SUPERCONDUCTOR AND SEMICONDUCTOR [J].

HATANO, M ;

NISHINO, T ;

KAWABE, U .

APPLIED PHYSICS LETTERS, 1987, 50 (01) :52-54

[3] SINGLE-CRYSTAL N-INAS COUPLED JOSEPHSON JUNCTION [J].

KAWAKAMI, T ;

TAKAYANAGI, H .

APPLIED PHYSICS LETTERS, 1985, 46 (01) :92-94

[4] NORMAL-INAS/GAAS HETEROSTRUCTURE SUPERCONDUCTING WEAK LINKS WITH NB ELECTRODES [J].

KLEINSASSER, AW ;

JACKSON, TN ;

PETTIT, GD ;

SCHMID, H ;

WOODALL, JM ;

KERN, DP .

APPLIED PHYSICS LETTERS, 1986, 49 (25) :1741-1743

[5]

KLEINSASSER AW, 1987, IN PRESS PHYS REV B

[6]

LIKHAREV KK, 1976, SOV TECH PHYS LETT, V2, P12

[7] CARRIER-CONCENTRATION DEPENDENCE OF CRITICAL SUPERCONDUCTING CURRENT INDUCED BY THE PROXIMITY EFFECT IN SILICON [J].

NISHINO, T ;

YAMADA, E ;

KAWABE, U .

PHYSICAL REVIEW B, 1986, 33 (03) :2042-2045

[8] 3-TERMINAL SUPERCONDUCTING DEVICE USING A SI SINGLE-CRYSTAL FILM [J].

NISHINO, T ;

MIYAKE, M ;

HARADA, Y ;

KAWABE, U .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (06) :297-299

[9] SILICON-COUPLED JOSEPHSON-JUNCTIONS AND SUPER-SHOTTKY DIODES WITH COPLANAR ELECTRODES [J].

RUBY, RC ;

VANDUZER, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) :1394-1397

[10]

RUSSO M, 1986, JOSEPHSON EFFECT ACH, P216

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