MODIFICATION OF THE ELECTRON-PHONON INTERACTIONS IN GAAS-GAALAS HETEROJUNCTIONS

被引:13
作者
DEGANI, MH
HIPOLITO, O
机构
关键词
D O I
10.1103/PhysRevLett.59.2820
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:2820 / 2820
页数:1
相关论文
共 5 条
[1]   MODIFICATION OF THE ELECTRON-PHONON INTERACTIONS IN GAAS-GAALAS HETEROJUNCTIONS [J].
BRUMMELL, MA ;
NICHOLAS, RJ ;
HOPKINS, MA ;
HARRIS, JJ ;
FOXON, CT .
PHYSICAL REVIEW LETTERS, 1987, 58 (01) :77-80
[2]  
DASSARMA S, 1985, PHYS REV B, V31, P5336
[3]   ELECTRON-PHOTON INTERACTION EFFECTS IN A QUASI-2-DIMENSIONAL ELECTRON-GAS IN THE GAAS-GA1-XALXAS HETEROSTRUCTURE [J].
DEGANI, MH ;
HIPOLITO, O .
PHYSICAL REVIEW B, 1987, 35 (14) :7717-7720
[4]   A STUDY OF THE CONDUCTION-BAND NONPARABOLICITY, ANISOTROPY AND SPIN SPLITTING IN GAAS AND INP [J].
HOPKINS, MA ;
NICHOLAS, RJ ;
PFEFFER, P ;
ZAWADZKI, W ;
GAUTHIER, D ;
PORTAL, JC ;
DIFORTEPOISSON, MA .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (09) :568-577
[5]   CYCLOTRON-RESONANCE STUDY OF POLARONS IN GAAS [J].
LINDEMANN, G ;
LASSNIG, R ;
SEIDENBUSCH, W ;
GORNIK, E .
PHYSICAL REVIEW B, 1983, 28 (08) :4693-4703