THERMOSTIMULATED CURRENT IN A P-N-JUNCTION BASED ON GE-SI ALLOY

被引：0

作者：

BAKIROV, MY

MADATOV, RS

MUSTAFAEV, YM

机构：

来源：

INORGANIC MATERIALS | 1978年 / 14卷 / 10期

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D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1490 / 1491

页数：2

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[1] INDIRECT TRANSITION IN NARROW JUNCTION OF GE-SI ALLOY
ANDO, KI
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (12) : 2360 - 2360
[2] SILICON P-N-JUNCTION ALLOY DIODES
PEARSON, GL
SAWYER, B
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1348 - 1351
[3] CURRENT/VOLTAGE CHARACTERISTICS OF P-N GE-SI AND GE-GAAS HETEROJUNCTIONS
DONNELLY, JP
MILNES, AG
PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (09): : 1468 - &
[4] OPTICAL MODULATION OF CURRENT IN GE-SI N-N HETEROJUNCTIONS
YAWATA, S
ANDERSON, RL
PHYSICA STATUS SOLIDI, 1965, 12 (01): : 297 - &
[5] Diffusion current flow through the p-n-junction
Bauman Moscow State Technical University, 52-nd Baumanskaya str., Moscow
105005, Russia
Appl. Phys., 2 (8-11): : 8 - 11
[6] CURRENT-VOLTAGE CHARACTERISTIC OF A P-N-JUNCTION
GORODETSKII, SM
LAZOVSKII, VV
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[7] CURRENT OF HOT CARRIERS ACROSS A P-N-JUNCTION
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OKSMAN, YA
SEMENOV, AA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (11): : 1441 - 1441
[8] INSB P-N-JUNCTION CURRENT LEAKAGE ANALYSIS
MANIV, S
SHAMAY, M
SINAI, Y
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 848 - 849
[9] AMPLIFICATION OF THE CURRENT IN A P-N-JUNCTION WITH HOT CARRIERS
BOCHKAREVA, NI
VEINGER, AI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (03): : 328 - 331
[10] SEM INVESTIGATION OF P-N-JUNCTION IN HOMOGENEOUS P-SI
LUKYANOV, AE
BUZYNIN, AN
BUTYLKIN, AI
BUTYLKINA, NA
SCANNING, 1992, 14 (06) : 358 - 359

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