PHOTOCONDUCTIVITY ASSOCIATED WITH INDIUM ACCEPTORS IN SILICON

被引：18
作者：
BLAKEMORE, JS
SARVER, CE
机构：
来源：
PHYSICAL REVIEW | 1968年 / 173卷 / 03期
关键词：
D O I：
10.1103/PhysRev.173.767
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：767 / +
页数：1
相关论文
共 29 条
[1]   APPLICATION OF QUANTUM DEFECT TECHNIQUES TO PHOTOIONIZATION OF IMPURITIES IN SEMICONDUCTORS [J].
BEBB, HB ;
CHAPMAN, RA .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (10) :2087-&
[2]   RADIATIVE CAPTURE BY IMPURITIES IN SEMICONDUCTORS [J].
BLAKEMORE, JS .
PHYSICAL REVIEW, 1967, 163 (03) :809-+
[3]   PHOTOCONDUCTIVITY IN INDIUM-DOPED SILICON [J].
BLAKEMORE, JS .
CANADIAN JOURNAL OF PHYSICS, 1956, 34 (09) :938-948
[4]  
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P241
[5]  
BLAKEMORE JS, 1968, 9 P INT C PHYS SEM M
[6]  
BRECKENRIDGE RG, 1956, PHOTOCONDUCTIVITY ED, P353
[7]   LOW-TEMPERATURE RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM AND SILICON [J].
BROWN, RA ;
RODRIGUEZ, S .
PHYSICAL REVIEW, 1967, 153 (03) :890-+
[8]   ABSORPTION SPECTRA OF IMPURITIES IN SILICON .1. GROUP-III ACCEPTORS [J].
BURSTEIN, E ;
PICUS, G ;
HENVIS, B ;
WALLIS, R .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) :65-74
[9]   OSCILLATORY PHOTOCONDUCTIVITY IN INSB [J].
ENGELER, W ;
LEVINSTEIN, H ;
STANNARD, C .
PHYSICAL REVIEW LETTERS, 1961, 7 (02) :62-&
[10]   INFRARED SPECTRA OF GROUP-III ACCEPTORS IN SILICON [J].
HROSTOWSKI, HJ ;
KAISER, RH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 4 (1-2) :148-153
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