INFLUENCE OF OXIDATION CONDITIONS ON THERMAL OXIDATION OF SILICON

[1] BOGENSCHUTZ AF, 1962, Z ANGEW PHYS, V14, P469

[2] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[3] THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN, AND STEAM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 527 - 533

[4] EDAGAWA H, 1963, JPN J APPL PHYS, V2, P765

[5] EVITTS HC, 1968, J ELECTROCHEM SOC, V111, P688

[6] FULLER CR, 1964, SPR EL SOC INC M, V13, P170

[7] LIEBERMANN MA, 1965, SPR EL SOC INC M, V14, P165

[8] NOTE ON SILICON OXIDE FILM THICKNESS MEASUREMENT [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) : 2909 - &

[1] BOGENSCHUTZ AF, 1962, Z ANGEW PHYS, V14, P469

[2] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[3] THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN, AND STEAM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 527 - 533

[4] EDAGAWA H, 1963, JPN J APPL PHYS, V2, P765

[5] EVITTS HC, 1968, J ELECTROCHEM SOC, V111, P688

[6] FULLER CR, 1964, SPR EL SOC INC M, V13, P170

[7] LIEBERMANN MA, 1965, SPR EL SOC INC M, V14, P165

[8] NOTE ON SILICON OXIDE FILM THICKNESS MEASUREMENT [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) : 2909 - &