SIMS AND MICROELECTRONICS

被引：11
作者：
CHU, PK
机构：
[1] Evans Asia, Ltd, Redwood City, CA 94063
来源：
MATERIALS CHEMISTRY AND PHYSICS | 1994年 / 38卷 / 03期
关键词：
D O I：
10.1016/0254-0584(94)90195-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Because of its unique capabilities to provide trace sensitivity and excellent depth and lateral resolution, SMS is one of the most powerful characterization techniques for semiconductor materials and microelectronic devices. A succinct review on the basic principles of SIMS will be given, followed by a description of the current status on quantification. We will also discuss selected applications of SIMS in these areas, in addition to some recent important innovations which have dramatically expanded the scope of the SIMS technique.
引用
收藏
页码：203 / 223
页数：21
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