REACTIVE ION ETCHING FOR SUB-MICRON STRUCTURES

被引:15
作者
CHINN, JD [1 ]
ADESIDA, I [1 ]
WOLF, ED [1 ]
TIBERIO, RC [1 ]
机构
[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 04期
关键词
D O I
10.1116/1.571222
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1418 / 1422
页数:5
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[4]  
COBURN JW, 1979, SOLID STATE TECHNOL, V22, P117
[5]   SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J].
EPHRATH, LM .
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KERN W, 1978, THIN FILM PROCESSES, P401