THERMAL EFFECTS AND INSTABILITIES IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：0

作者：

KARNER, M ^{[1
]}

TEWS, H ^{[1
]}

ZWICKNAGL, P ^{[1
]}

SEITZER, D ^{[1
]}

机构：

[1] FRAUNHOFER GESELL FHG 2S,D-91058 ERLANGEN,GERMANY

来源：

GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993 | 1994年 / 136卷 / 136期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The interaction between thermal and electrical properties of A1GaAs/GaAs heterojunction bipolar transistors is investigated. Thermal resistance variation has significant influence on the self-heating effect. Multifinger devices exhibit hot spot formation and movement. These effects are attributed to positive electrothermal feedback by the negative temperature coefficient of the base-emitter voltage. A shift of the common-emitter breakdown voltage is observed. This effect occurs due to intrinsic temperature rise by self-heating.

引用

页码：165 / 170

页数：6

共 8 条

[1] THERMAL-RESISTANCE MEASUREMENTS FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].