THERMAL EFFECTS AND INSTABILITIES IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：0
|
作者：
KARNER, M [1 ]
TEWS, H [1 ]
ZWICKNAGL, P [1 ]
SEITZER, D [1 ]
机构：
[1] FRAUNHOFER GESELL FHG 2S,D-91058 ERLANGEN,GERMANY
来源：
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993 | 1994年 / 136卷 / 136期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The interaction between thermal and electrical properties of A1GaAs/GaAs heterojunction bipolar transistors is investigated. Thermal resistance variation has significant influence on the self-heating effect. Multifinger devices exhibit hot spot formation and movement. These effects are attributed to positive electrothermal feedback by the negative temperature coefficient of the base-emitter voltage. A shift of the common-emitter breakdown voltage is observed. This effect occurs due to intrinsic temperature rise by self-heating.
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页码：165 / 170
页数：6
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