ON THE STRUCTURE OF NONCRYSTALLINE SI AND SI1-XHX FILMS

被引：14

作者：

REVESZ, AG

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 60卷 / 02期

关键词：

D O I：

10.1002/pssa.2210600234

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：619 / 629

页数：11

共 26 条

[1]

BALL EE, 1977, CHEM SCRIPTA, V12, P128

[2] COMPARATIVE-STUDY OF STRUCTURE OF EVAPORATED AND GLOW-DISCHARGE SILICON [J].

BARNA, A ;

BARNA, PB ;

RADNOCZI, G ;

TOTH, L ;

THOMAS, P .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (01) :81-84

[3] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

[4] SYSTEMATIC GENERATION OF RANDOM NETWORKS [J].

DUFFY, MG ;

BOUDREAUX, DS ;

POLK, DE .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1974, 15 (03) :435-454

[5] OPTICAL-CONSTANTS OF RF SPUTTERED HYDROGENATED AMORPHOUS SI [J].

FREEMAN, EC ;

PAUL, W .

PHYSICAL REVIEW B, 1979, 20 (02) :716-728

[6] STRUCTURE OF GLOW-DISCHARGE AMORPHOUS SILICON [J].

GRACZYK, JF .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (01) :231-242

[7] BRILLOUIN-SCATTERING FROM HYDROGENATED AMORPHOUS SILICON [J].

GRIMSDITCH, M ;

SENN, W ;

WINTERLING, G ;

BRODSKY, MH .

SOLID STATE COMMUNICATIONS, 1978, 26 (04) :229-233

[8] HOPPING CONDUCTIVITY IN C-IMPLANTED AMORPHOUS DIAMOND, OR HOW TO RUIN A PERFECTLY GOOD DIAMOND [J].

HAUSER, JJ ;

PATEL, JR .

SOLID STATE COMMUNICATIONS, 1976, 18 (07) :789-790

[9] OPTICAL-PROPERTIES AND STRUCTURE OF AMORPHOUS SILICON FILMS PREPARED BY CVD [J].

JANAI, M ;

ALLRED, DD ;

BOOTH, DC ;

SERAPHIN, BO .

SOLAR ENERGY MATERIALS, 1979, 1 (1-2) :11-27

[10] ELECTRONIC PROPERTIES OF COMPLEX CRYSTALLINE AND AMORPHOUS PHASES OF GE AND SI .2. BAND-STRUCTURE AND OPTICAL PROPERTIES [J].

JOANNOPOULOS, JD ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 8 (06) :2733-2755

← 1 2 3 →