IMPURITY-DEFECT INTERACTION IN GALLIUM-ARSENIDE DOPED BY IMPLANTATION OF TELLURIUM IONS

被引：0

作者：

ZELEVINSKAYA, VM ^{[1
]}

KACHURIN, GA ^{[1
]}

SMIRNOV, LS ^{[1
]}

机构：

[1] ACAD SCI USSR, SEMICOND PHYS INST, NOVOSIBIRSK, USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 6卷 / 07期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：1209 / 1210

页数：2

相关论文

共 10 条

[1] KACHURIN GA, 1971, PRIB TEKH EKSP, P222
[2] OBSERVATIONS CONCERNING RADIATIVE EFFICIENCY AND DEEP-LEVEL LUMINESCENCE IN N-TYPE GAAS PREPARED BY LIQUID-PHASE EPITAXY
KRESSEL, H
HAWRYLO, FZ
ABRAHAMS, MS
BUIOCCHI, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) : 5139 - &
[3] MADELUNG O, 1964, PHYSICS III V COMPOU
[4] Zelevinskaya V. M., 1971, Fizika i Tekhnika Poluprovodnikov, V5, P1150
[5] Zelevinskaya V. M., 1971, Fizika i Tekhnika Poluprovodnikov, V5, P1659
[6] Zelevinskaya V. M., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P1784
[7] ZELEVINSKAYA VM, 1972, SOV PHYS SEMICOND+, V5, P1455
[8] ZELEVINSKAYA VM, 1971, SOV PHYS SEMICOND+, V5, P1011
[9] ZELEVINSKAYA VM, 1971, SOV PHYS SEMICOND+, V4, P1529
[10] ZELEVINSKAYA VM, 1972, FIZ TEKH POLUPROV, V6, P1385