VAPOR-PHASE EPITAXIAL-GROWTH OF INGAAS-INASP HETEROJUNCTIONS FOR LONG WAVELENGTH TRANSFERRED ELECTRON PHOTO-CATHODES

被引：7

作者：

SAXENA, RR

HYDER, SB

GREGORY, PE

ESCHER, JS

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1980年 / 50卷 / 02期

关键词：

D O I：

10.1016/0022-0248(80)90096-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：481 / 484

页数：4

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[9] VAPOR-PHASE EPITAXIAL-GROWTH OF INGAAS LATTICE MATCHED TO (100) INP FOR PHOTO-DIODE APPLICATION
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