VAPOR-PHASE EPITAXIAL-GROWTH OF INGAAS-INASP HETEROJUNCTIONS FOR LONG WAVELENGTH TRANSFERRED ELECTRON PHOTO-CATHODES

被引:7
作者
SAXENA, RR
HYDER, SB
GREGORY, PE
ESCHER, JS
机构
关键词
D O I
10.1016/0022-0248(80)90096-2
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:481 / 484
页数:4
相关论文
共 18 条
[1]   DEPOSITION OF EPITAXIAL INASXP(1-X) ON GAAS AND GAP SUBSTRATES [J].
ALLEN, HA ;
MEHAL, EW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (08) :1081-&
[3]   TRANSFERRED ELECTRON PHOTOEMISSION FROM INP [J].
BELL, RL ;
JAMES, LW ;
MOON, RL .
APPLIED PHYSICS LETTERS, 1974, 25 (11) :645-646
[4]   TRANSFERRED-ELECTRON PHOTOEMISSION TO 1.65 MUM FROM INGAAS [J].
ESCHER, JS ;
GREGORY, PE ;
HYDER, SB ;
SANKARAN, R .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2591-2592
[5]   FIELD-ASSISTED PHOTOEMISSION TO 2.1 MICRONS FROM A AG-P-IN0.77GA0.23AS PHOTO-CATHODE [J].
GREGORY, PE ;
ESCHER, JS ;
SAXENA, RR ;
HYDER, SB .
APPLIED PHYSICS LETTERS, 1980, 36 (08) :639-640
[6]  
HALAIS J, 1972, J CRYSTAL GROWTH, V17, P173
[7]  
HALES MC, 1970, 3RD P INT S GAAS, P50
[8]  
HILSUM C, 1971 P EUR SOL STAT, P77
[9]   VAPOR-PHASE EPITAXIAL-GROWTH OF INGAAS LATTICE MATCHED TO (100) INP FOR PHOTO-DIODE APPLICATION [J].
HYDER, SB ;
SAXENA, RR ;
CHIAO, SH ;
YEATS, R .
APPLIED PHYSICS LETTERS, 1979, 35 (10) :787-789
[10]   VAPOR-PHASE EPITAXIAL-GROWTH OF QUATERNARY IN1-XGAXASYP1-Y IN THE 0.75-1.35-EV BAND-GAP RANGE [J].
HYDER, SB ;
SAXENA, RR ;
HOOPER, CC .
APPLIED PHYSICS LETTERS, 1979, 34 (09) :584-586