POSITIVE-TONE SILYLATION PROCESSES AT 193 NM

被引：1
|
作者：
HARTNEY, MA
ROTHSCHILD, M
KUNZ, RR
EHRLICH, DJ
SHAVER, DC
机构：
[1] Lincoln Laboratory, Massachusetts Institute of Technology Lexington
来源：
MICROELECTRONIC ENGINEERING | 1991年 / 13卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(91)90046-G
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A silylation process based on laser induced crosslinking has been developed using novolac, novolac/ diazoquinone blends and chemically amplified resists. Dimethylsilyldimethylamine was used as a silylating reagent. The diffusion characteristics show a change at the polymer glass transition temperature. The profile of diffused silicon is anisotropic, and diffusion in unexposed regions of the film is affected by the extent of exposure in adjacent regions of the film.
引用
收藏
页码：51 / 56
页数：6
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