ELECTROWINNING OF SILICON FROM K2SIF6-MOLTEN FLUORIDE SYSTEMS

被引:101
作者
RAO, GM
ELWELL, D
FEIGELSON, RS
机构
关键词
D O I
10.1149/1.2130041
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1940 / 1944
页数:5
相关论文
共 19 条
[1]   SILICON EPITAXIAL-GROWTH BY ELECTRODEPOSITION FROM MOLTEN FLUORIDES [J].
COHEN, U ;
HUGGINS, RA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (03) :381-383
[2]   SOME PROSPECTIVE APPLICATIONS OF SILICON ELECTRODEPOSITION FROM MOLTEN FLUORIDES TO SOLAR-CELL FABRICATION [J].
COHEN, U .
JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (06) :607-643
[3]  
Cohen U., 1979, Patent No. [4,142,947, 4142947]
[4]  
Cohen U., 1976, Patent No. [3,983,012, 3983012]
[5]  
Delimarskii I.K., 1961, ELECTROCHEMISTRY FUS
[6]   CONDITIONS FOR STABLE GROWTH OF EPITAXIAL GAP LAYERS BY MOLTEN-SALT ELECTRODEPOSITION [J].
DEMATTEI, RC ;
ELWELL, D ;
FEIGELSON, RS .
JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :545-552
[7]  
DEMITRAS GD, 1972, INORGANIC CHEM
[8]  
DEVILLE HS, 1854, ANN CHIM PHYS, V43, P31
[9]  
DODERO M, 1939, B SOC CHIM FR, V6, P209
[10]   PRODUCTION OF REFRACTORY-METALS BY ELECTROLYSIS OF MOLTEN-SALTS - DESIGN FACTORS AND LIMITATIONS [J].
INMAN, D ;
WHITE, SH .
JOURNAL OF APPLIED ELECTROCHEMISTRY, 1978, 8 (05) :375-390