ELECTROWINNING OF SILICON FROM K2SIF6-MOLTEN FLUORIDE SYSTEMS

[1] SILICON EPITAXIAL-GROWTH BY ELECTRODEPOSITION FROM MOLTEN FLUORIDES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (03) : 381 - 383

[2] SOME PROSPECTIVE APPLICATIONS OF SILICON ELECTRODEPOSITION FROM MOLTEN FLUORIDES TO SOLAR-CELL FABRICATION [J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (06) : 607 - 643

[3] Cohen U., 1979, Patent No. [4,142,947, 4142947]

[4] Cohen U., 1976, Patent No. [3,983,012, 3983012]

[5] Delimarskii I.K., 1961, ELECTROCHEMISTRY FUS

[6] CONDITIONS FOR STABLE GROWTH OF EPITAXIAL GAP LAYERS BY MOLTEN-SALT ELECTRODEPOSITION [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) : 545 - 552

[7] DEMITRAS GD, 1972, INORGANIC CHEM

[8] DEVILLE HS, 1854, ANN CHIM PHYS, V43, P31

[9] DODERO M, 1939, B SOC CHIM FR, V6, P209

[10] PRODUCTION OF REFRACTORY-METALS BY ELECTROLYSIS OF MOLTEN-SALTS - DESIGN FACTORS AND LIMITATIONS [J]. JOURNAL OF APPLIED ELECTROCHEMISTRY, 1978, 8 (05) : 375 - 390

[1] SILICON EPITAXIAL-GROWTH BY ELECTRODEPOSITION FROM MOLTEN FLUORIDES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (03) : 381 - 383

[2] SOME PROSPECTIVE APPLICATIONS OF SILICON ELECTRODEPOSITION FROM MOLTEN FLUORIDES TO SOLAR-CELL FABRICATION [J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (06) : 607 - 643

[3] Cohen U., 1979, Patent No. [4,142,947, 4142947]

[4] Cohen U., 1976, Patent No. [3,983,012, 3983012]

[5] Delimarskii I.K., 1961, ELECTROCHEMISTRY FUS

[6] CONDITIONS FOR STABLE GROWTH OF EPITAXIAL GAP LAYERS BY MOLTEN-SALT ELECTRODEPOSITION [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) : 545 - 552

[7] DEMITRAS GD, 1972, INORGANIC CHEM

[8] DEVILLE HS, 1854, ANN CHIM PHYS, V43, P31

[9] DODERO M, 1939, B SOC CHIM FR, V6, P209

[10] PRODUCTION OF REFRACTORY-METALS BY ELECTROLYSIS OF MOLTEN-SALTS - DESIGN FACTORS AND LIMITATIONS [J]. JOURNAL OF APPLIED ELECTROCHEMISTRY, 1978, 8 (05) : 375 - 390