BI-SR-CA-CU-O THIN-FILM ENERGY-GAP AS A FUNCTION OF TEMPERATURE AND FORCE APPLIED TO SQUEEZABLE-ELECTRON-TUNNELING JUNCTIONS

被引：13

作者：

WALSH, T ^{[1
]}

MORELAND, J ^{[1
]}

ONO, RH ^{[1
]}

KALKUR, TS ^{[1
]}

机构：

[1] UNIV COLORADO,COLORADO SPRINGS,CO 80933

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 13期

关键词：

D O I：

10.1103/PhysRevB.43.11492

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tunneling-spectroscopy measurements have been performed on Bi-Sr-Ca-Cu-O squeezable-electron-tunneling (SET) junctions. Two distinct features have been seen in the current-voltage [I(V)] and conductance-voltage [G(V)] characteristics. One of these features has the appearance of an energy-gap signature, while the other may be due to switching to the voltage state of a grain-boundary junction that is in series with the SET junction. The latter feature can mimic the energy-gap signature in I(V) and G(V) characteristics. These two features respond very differently to changes in temperature and the force applied to the SET junctions.

引用

页码：11492 / 11495

页数：4

共 14 条

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