GROWTH OF HOMOEPITAXIAL SILICON AT LOW TEMPERATURES USING SILANE-HELIUM MIXTURES

被引:17
作者
CHIANG, YS
RICHMAN, D
机构
来源
METALLURGICAL TRANSACTIONS | 1971年 / 2卷 / 03期
关键词
D O I
10.1007/BF02662730
中图分类号
TF [冶金工业];
学科分类号
0806 ;
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页码:743 / &
相关论文
共 3 条
[1]   EPITAXIAL GROWTH OF SILICON FROM THE PYROLYSIS OF MONOSILANE ON SILICON SUBSTRATES [J].
JOYCE, BA ;
BRADLEY, RR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (12) :1235-1240
[2]   LOW-TEMPERATURE EPITAXIAL GROWTH OF SINGLE CRYSTALLINE SILICON FROM SILANE [J].
RICHMAN, D ;
ARLETT, RH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) :872-+
[3]  
Richman D., 1969, Semiconductor silicon, P200