SAMPLE GEOMETRY-EFFECTS IN RAPID THERMAL ANNEALING

被引：4

作者：

RUGGLES, GA ^{[1
]}

HONG, SN ^{[1
]}

WORTMAN, JJ ^{[1
]}

SORRELL, FY ^{[1
]}

OZTURK, MC ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MECH & AEROSP ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.584837

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：122 / 127

页数：6

共 10 条

[1]

BASRA V, 1985, P SOC PHOTO-OPT INST, V530, P97, DOI 10.1117/12.946473

[2]

GELPEY JC, 1986, MATERIALS RES SOC S, V52, P199

[3]

PETTIBONE DW, 1986, MATER RES SOC S P, V52, P209

[4] TEMPERATURE TRANSIENTS IN HEAVILY DOPED AND UNDOPED SILICON USING RAPID THERMAL ANNEALING [J].

SEIDEL, TE ;

LISCHNER, DJ ;

PAI, CS ;

LAU, SS .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1317-1321

[5]

SHEETS RE, 1986, MATERIALS RES SOC S, V52, P191

[6] RAPS - A RAPID THERMAL PROCESSOR SIMULATION PROGRAM [J].

SHIEH, TJ ;

CARTER, RL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (01) :19-24

[7]

SORRELL FY, 1989, OCT SPIE S RAP IS PR

[8]

SORRELL FY, COMPUTER SIMULATION

[9]

SORRELL FY, UNPUB

[10] TEMPERATURE TRANSIENTS OF ION-IMPLANTED SILICON-WAFERS DURING RAPID THERMAL ANNEALING [J].

UOOCHI, Y ;

SHIOYA, Y ;

MAEDA, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8A) :2007-2010

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