MAGNETORESISTANCE OF N-TYPE GE ON TRANSITION FROM IMPURITY TO BAND CONDUCTION

被引：0

作者：

MATVEEV, GA ^{[1
]}

SOKOLOV, VI ^{[1
]}

TSIDILKOVSKII, IM ^{[1
]}

机构：

[1] ACAD SCI USSR,URAL SCI CTR,PHYS MET INST,SVERDLOVSK,USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 8卷 / 06期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：727 / 728

页数：2

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[32] SATURATION MAGNETORESISTANCE + IMPURITY SCATTERING ANISOTROPY IN N-TYPE SILICON [J].

NEURINGER, LJ ;

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PHYSICAL REVIEW, 1964, 135 (3A) :A788-+

[33] INVESTIGATION OF CONDUCTION BAND IN N-TYPE GASB [J].

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[34] DETERMINATION OF TEMPERATURE OF HOT ELECTRONS IN N-TYPE GE FROM LONGITUDINAL MAGNETORESISTANCE [J].

VESELAGO, VG ;

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[35] CHARACTERISTIC FEATURES OF MAGNETORESISTANCE OF UNIAXIALLY DEFORMED N-TYPE GE [J].

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[36] IMPURITY BANDS AND BAND TAILING IN N-TYPE GAAS [J].

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[37] FORMATION AND PROPERTIES OF AN IMPURITY BAND IN N-TYPE GAAS [J].

EMELYANE.OV ;

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SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (05) :1063-+

[38] OBSERVATION OF A METALLIC IMPURITY BAND IN N-TYPE GAAS [J].

ROMERO, D ;

LIU, S ;

DREW, HD ;

PLOOG, K .

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[39] MAGNETORESISTANCE IN IMPURITY BAND CONDUCTION REGION OF STRAINED P-TYPE GERMANIUM [J].

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[40] IMPURITY EFFECTS ON CONDUCTION IN HEAVILY DOPED N-TYPE SILICON [J].

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