MAGNETORESISTANCE OF N-TYPE GE ON TRANSITION FROM IMPURITY TO BAND CONDUCTION

被引：0
作者：
MATVEEV, GA [1 ]
SOKOLOV, VI [1 ]
TSIDILKOVSKII, IM [1 ]
机构：
[1] ACAD SCI USSR,URAL SCI CTR,PHYS MET INST,SVERDLOVSK,USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 8卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：727 / 728
页数：2
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