QUANTUM WIRES WITH THE TUNABLE WIDTH OF CONDUCTING CHANNEL IN IN0.53GA0.47AS/INP HETEROSTRUCTURES

Submicron (up to 0.3 mu m) quantum wires made from selectively doped In0.53Ga0.47As/InP heterostructures have been investigated. A comparison of low-temperature galvanomagnetic properties in narrow wires and two-dimensional sample as well as the analysis of negative magnetoresistance in wires have been made for different levels of persistent photoconductivity. The interband illumination has been shown to change the conducting channel width in the interval (3-900) nm. Due to the persistent photoconductivity effect, these changes continue after the end of illumination. The quenching of persistent photoconductivity effect and the restoration of the equilibrium channel width can be made not only by sample heating but also in a more controllable way - by short electric impulses.