OXYGEN VACANCY IN ALPHA-QUARTZ - A POSSIBLE BISTABLE AND METASTABLE DEFECT

被引:114
作者
SNYDER, KC [1 ]
FOWLER, WB [1 ]
机构
[1] LEHIGH UNIV,SHERMAN FAIRCHILD LAB,BETHLEHEM,PA 18015
来源
PHYSICAL REVIEW B | 1993年 / 48卷 / 18期
关键词
D O I
10.1103/PhysRevB.48.13238
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Semiempirical cluster calculations are performed on positive (E1' center) and neutral oxygen-vacancy defects in alpha-quartz. A comparison is made of the various available Hamiltonians and the use of unrestricted wave functions. The results predict that these two defects form a bistable system, exhibiting the same two metastable configurations but differing in which configuration is lower in energy. The neutral charge state favors a configuration in which the silicon atoms adjacent to the vacancy relax only slightly away from their perfect crystal positions. The positive charge state yields a minimum energy configuration with large relaxation of the silicon on the long-bond side of the vacancy. This silicon atom, in fact, moves through its basal oxygen plane and bonds with an oxygen atom, making the oxygen atom threefold coordinated. Unpaired spin localization is consistent with experimental data from electron-paramagnetic-resonance studies on irradiated quartz.
引用
收藏
页码:13238 / 13243
页数:6
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