FREQUENCY-RESPONSE SUBTRACTION FOR SIMPLE MEASUREMENT OF INTRINSIC LASER DYNAMIC PROPERTIES

被引:81
作者
MORTON, PA
TANBUNEK, T
LOGAN, RA
SERGENT, AM
SCIORTINO, PF
COBLENTZ, DL
机构
[1] AT&T Bell Laboratories, Murray Hill
关键词
D O I
10.1109/68.122339
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We describe a new technique for extracting the intrinsic laser-diode dynamic properties accurately. This simple technique eliminates the need for accurate microwave calibration of the test equipment and problems of microwave reflections, nonideal frequency response of laser mount, and detector. The effect of the parasitic components of the laser diode are also eliminated from the results so that measurements of important dynamic properties of the laser can be found up to high frequencies (10-20 GHz) on standard laser diodes. We show the technique being used to measure variations of resonance peak and damping factor at different bias levels for a standard bulk active region 1.3-mu-m laser diode.
引用
收藏
页码:133 / 136
页数:4
相关论文
共 9 条
[1]   EFFECT OF NONLINEAR GAIN ON MODULATION DYNAMICS IN QUANTUM-WELL LASERS [J].
ARAKAWA, Y ;
TAKAHASHI, T .
ELECTRONICS LETTERS, 1989, 25 (02) :169-170
[2]   HIGH-SPEED SEMICONDUCTOR-LASER DESIGN AND PERFORMANCE [J].
BOWERS, JE .
SOLID-STATE ELECTRONICS, 1987, 30 (01) :1-11
[3]   EFFECT OF STRAIN ON THE RESONANT-FREQUENCY AND DAMPING FACTOR IN INGAAS/INP MULTIPLE QUANTUM-WELL LASERS [J].
FUKUSHIMA, T ;
BOWERS, JE ;
LOGAN, RA ;
TANBUNEK, T ;
TEMKIN, H .
APPLIED PHYSICS LETTERS, 1991, 58 (12) :1244-1246
[4]  
NAGARAJAN R, IN PRESS EFFECTS CAR
[5]   FREQUENCY-RESPONSE OF 1.3-MU-M INGAASP HIGH-SPEED SEMICONDUCTOR-LASERS [J].
OLSHANSKY, R ;
HILL, P ;
LANZISERA, V ;
POWAZINIK, W .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (09) :1410-1418
[6]   HIGH-SPEED MODULATION OF SEMICONDUCTOR-LASERS [J].
TUCKER, RS .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (06) :1180-1192
[7]   INTRINSIC MODULATION BANDWIDTH IN ULTRA-HIGH-SPEED 1.3-MU-M AND 1.55-MU-M GAINASP DFB LASERS [J].
UOMI, K ;
NAKANO, H ;
CHINONE, N .
ELECTRONICS LETTERS, 1989, 25 (25) :1689-1690
[8]   OSCILLATION WAVELENGTH AND LASER STRUCTURE DEPENDENCE OF NONLINEAR DAMPING EFFECT IN SEMICONDUCTOR-LASERS [J].
UOMI, K ;
TSUCHIYA, T ;
AOKI, M ;
CHINONE, N .
APPLIED PHYSICS LETTERS, 1991, 58 (07) :675-677
[9]   CAVITY LENGTH AND DOPING DEPENDENCE OF 1.5-MU-M GAINAS/GAINASP MULTIPLE QUANTUM-WELL LASER CHARACTERISTICS [J].
ZAH, CE ;
BHAT, R ;
MENOCAL, SG ;
FAVIRE, F ;
ANDREADAKIS, NC ;
KOZA, MA ;
CANEAU, C ;
SCHWARZ, SA ;
LO, Y ;
LEE, TP .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (04) :231-233