BEHAVIOR OF MOLYBDENUM DIBORIDE IN RESISTIVE THICK-FILM

被引：3

作者：

AKULOVA, LT

VLASOVA, MV

VOROPAEVA, IV

HORPYAKOV, OT

机构：

[1] The Institute for Problems of Materials Science of the Ukrainian Academy of Sciences, Kiev

来源：

JOURNAL OF MATERIALS SCIENCE | 1992年 / 27卷 / 12期

关键词：

D O I：

10.1007/BF01116026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A study of the resistive composition composed of Mo2B5 and glass containing oxides of Si, Pb, Ba, Ca, Sr, Zr, Mo and Al is made. Oxidation of surface boride particles was found to take place prior to glass melting. In the melt, oxidation products diffuse into a glassy binder and Mo oxides are reduced with boride to metallic Mo. Film electrophysical characteristics (rho, temperature resistance coefficient) are determined by quantitative and three dimensional distribution of the conductive phases Mo2B5, MoB, MoO2, defective MoO3 and metallic Mo.

引用

页码：3293 / 3296

页数：4

共 14 条

[1]

AKULOVA LT, 1986, FIZIKA KHIMIYA STEKL, V12, P574

[2]

ANDRONOVA RE, 1987, MIKROELEKTRONIKA, V2, P101

[3]

ANDRONOVA RE, 1986, MIKROELEKTRONIKA, V1, P107

[4] ELECTRON-SPIN RESONANCE STUDY OF THERMALLY EVAPORATED AMORPHOUS THIN-FILMS OF MOO3 SIO [J].