EXTENSION OF EXISTING MODELS TO ION-IMPLANTED MESFETS

[1] [Anonymous], IEEE T ELECT DEVICES

[2] Engelmann R. W. H., 1976, International Electron Devices Meeting. (Technical digest), P351

[3] BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) : 1288 - 1296

[4] CHARGE NEUTRALITY IN SEMICONDUCTORS WITH IMPLANTED IMPURITY PROFILES [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 603 - &

[5] SMALL SIGNAL PROPERTIES OF FIELD EFFECT DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (12) : 605 - +

[6] LOW-NOISE GAAS FETS PREPARED BY ION-IMPLANTATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 587 - 596

[7] CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 213 - 220

[8] FIELD DISTRIBUTION IN JUNCTION FIELD-EFFECT TRANSISTORS AT LARGE DRAIN VOLTAGES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) : 273 - 281

[9] VOLGATE-CURRENT CHARACTERISTICS OF GAAS J-FETS IN HOT ELECTRON RANGE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (10) : 1415 - &

[10] PROFILE DESIGN FOR DISTORTION REDUCTION IN MICROWAVE FIELD-EFFECT TRANSISTORS [J]. ELECTRONICS LETTERS, 1978, 14 (06) : 204 - 206

[1] [Anonymous], IEEE T ELECT DEVICES

[2] Engelmann R. W. H., 1976, International Electron Devices Meeting. (Technical digest), P351

[3] BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) : 1288 - 1296

[4] CHARGE NEUTRALITY IN SEMICONDUCTORS WITH IMPLANTED IMPURITY PROFILES [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 603 - &

[5] SMALL SIGNAL PROPERTIES OF FIELD EFFECT DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (12) : 605 - +

[6] LOW-NOISE GAAS FETS PREPARED BY ION-IMPLANTATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 587 - 596

[7] CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 213 - 220

[8] FIELD DISTRIBUTION IN JUNCTION FIELD-EFFECT TRANSISTORS AT LARGE DRAIN VOLTAGES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) : 273 - 281

[9] VOLGATE-CURRENT CHARACTERISTICS OF GAAS J-FETS IN HOT ELECTRON RANGE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (10) : 1415 - &

[10] PROFILE DESIGN FOR DISTORTION REDUCTION IN MICROWAVE FIELD-EFFECT TRANSISTORS [J]. ELECTRONICS LETTERS, 1978, 14 (06) : 204 - 206