INTERFACE CHEMISTRY OF METAL-GAAS SCHOTTKY-BARRIER CONTACTS

被引：182

作者：

WALDROP, JR

GRANT, RW

机构：

[1] Rockwell International Science Center, Thousand Oaks

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 10期

关键词：

D O I：

10.1063/1.90642

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A survey of the metal-semiconductor interface chemistry for GaAs and seven metals, Ag, Al, Au, Cr, Fe, Sn, and Ti, by using x-ray photoemission spectroscopy (XPS) is reported. Sn and Ag each form an abrupt inert interface with GaAs. Au, Al, Fe, Cr, and Ti each form a chemically reacted nonabrupt interface with a trend for increasing dissociation of GaAs in the order listed. Also reported is the first observation of epitaxial Fe growth on GaAs.

引用

页码：630 / 632

页数：3

共 7 条

[1]

BACHRACH RZ, 1978, J VAC SCI TECHNOL, V15, P1378

[2] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J].