INTERFACE CHEMISTRY OF METAL-GAAS SCHOTTKY-BARRIER CONTACTS

被引：182
|
作者：
WALDROP, JR
GRANT, RW
机构：
[1] Rockwell International Science Center, Thousand Oaks
来源：
APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 10期
关键词：
D O I：
10.1063/1.90642
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A survey of the metal-semiconductor interface chemistry for GaAs and seven metals, Ag, Al, Au, Cr, Fe, Sn, and Ti, by using x-ray photoemission spectroscopy (XPS) is reported. Sn and Ag each form an abrupt inert interface with GaAs. Au, Al, Fe, Cr, and Ti each form a chemically reacted nonabrupt interface with a trend for increasing dissociation of GaAs in the order listed. Also reported is the first observation of epitaxial Fe growth on GaAs.
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页码：630 / 632
页数：3
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