NEW SOURCE OF DISLOCATIONS IN GEXSI1-X/SI(100) STRAINED EPITAXIAL LAYERS

被引：41

作者：

EAGLESHAM, DJ ^{[1
]}

MAHER, DM ^{[1
]}

KVAM, EP ^{[1
]}

BEAN, JC ^{[1
]}

HUMPHREYS, CJ ^{[1
]}

机构：

[1] UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,ENGLAND

来源：

PHYSICAL REVIEW LETTERS | 1989年 / 62卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.62.187

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：187 / 190

页数：4

共 35 条

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[4]

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[5]

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[7] THERMAL RELAXATION OF METASTABLE STRAINED-LAYER GEXSI1-X/SI EPITAXY [J].

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[8]

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[9] ROLE OF EXPERIMENTAL RESOLUTION IN MEASUREMENTS OF CRITICAL LAYER THICKNESS FOR STRAINED-LAYER EPITAXY [J].

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[10]

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