AC CONDUCTION IN RF SPUTTERED SIO2-FILMS

被引：27
作者：
MEAUDRE, M
MEAUDRE, R
机构：
[1] Laboratoire de Physique Electronique, Université de Lyon, Villeurbanne, 69621
来源：
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1979年 / 40卷 / 05期
关键词：
D O I：
10.1080/13642817908246381
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The a.c. conductivity of r.f. sputtered SiO2 films has been measured in the frequency range 40-107 Hz and in the temperature range 77-573 K. For T≥> 320 K, the conductivity obeys an equation of the form σ(ω) = Aω8, where the quantity a is linearly dependent on the temperature and is close to, but less than, unity. Below 320 K, σ(ω) is almost temperature-independent with 8-1. Different transport mechanisms are discussed. © 1979 Taylor and Francis Ltd.
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页码：401 / 410
页数：10
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