EPITAXIAL GAAS KINETIC STUDIES - (001)ORIENTATION

[1] AERODYNAMIC FORCES IN THERMOGRAVIMETRY [J]. ANALYTICAL CHEMISTRY, 1963, 35 (11) : 1729 - &

[2] DAY GF, 1966, AF336151988 CONTR

[3] INFLUENCE OF VAPOR COMPOSITION ON THE GROWTH RATE AND MORPHOLOGY OF GALLIUM ARSENIDE EPITAXIAL FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (11) : 1266 - 1269

[4] ANALYSIS OF THE HYDROGEN REDUCTION OF SILICON TETRACHLORIDE PROCESS ON THE BASIS OF A QUASI-EQUILIBRIUM MODEL [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) : 1381 - 1383

[5] INFLUENCE OF SUBSTRATE TEMPERATURE ON GAAS EPITAXIAL DEPOSITION RATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (04) : 405 - &

[6] SHAW DW, 1968 INT S GAAS I PH, P50

[7] SHAW DW, 1966 INT S GAAS I PH, P10

[8] GROWTH RATE AND SURFACE MORPHOLOGY STUDIES IN GECL4-H2 SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 81 - &

[1] AERODYNAMIC FORCES IN THERMOGRAVIMETRY [J]. ANALYTICAL CHEMISTRY, 1963, 35 (11) : 1729 - &

[2] DAY GF, 1966, AF336151988 CONTR

[3] INFLUENCE OF VAPOR COMPOSITION ON THE GROWTH RATE AND MORPHOLOGY OF GALLIUM ARSENIDE EPITAXIAL FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (11) : 1266 - 1269

[4] ANALYSIS OF THE HYDROGEN REDUCTION OF SILICON TETRACHLORIDE PROCESS ON THE BASIS OF A QUASI-EQUILIBRIUM MODEL [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) : 1381 - 1383

[5] INFLUENCE OF SUBSTRATE TEMPERATURE ON GAAS EPITAXIAL DEPOSITION RATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (04) : 405 - &

[6] SHAW DW, 1968 INT S GAAS I PH, P50

[7] SHAW DW, 1966 INT S GAAS I PH, P10

[8] GROWTH RATE AND SURFACE MORPHOLOGY STUDIES IN GECL4-H2 SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 81 - &